050-7202 rev c 6-2014 ? ultra low r ds ( on ) ? increased power dissipation ? low miller capacitance ? ultra low gate charge, q g ? avalanche energy rated ? to-247 or surface mount d 3 pak package apt47n65bc3 APT47N65SC3 650v 47a 0.070 maximum ratings all ratings: t c = 25c unless otherwise speciied. static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 650 0.06 0.07 0.5 25 250 100 2.10 3 3.9 characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 30a) zero gate voltage drain current (v ds = 650v, v gs = 0v) zero gate voltage drain current (v ds = 650v, v gs = 0v, t j = 150c) gate-source leakage current (v gs = 20v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.7ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l dv / dt i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. drain-source voltage slope (v ds = 480v, i d = 47a, t j = 125c) repetitive avalanche current 7 ++++repetitive avalanche energy 7 single pulse avalanche energy 4 single pulse avalanche energy 4 unit volts amps volts watts w/c c v/ns amps mj apt47n65b_sc3 650 47 141 20 30 417 3.33 -55 to 150 260 50 20 1 1800 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should b e followed. "coolmos? comprise a new family of transistors developed by inineon technologies ag. "coolmos" is a trade- mark of inineon technologies ag." microsemi website - http://www.microsemi.com super junction mosfet to-247 d 3 pak g d s c po we r se mi co nd uc to rs o o l mo s downloaded from: http:///
dynamic characteristics apt47n65bc3 050-7202 rev c 6-2014 single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 unit amps volts ns c v/ns min typ max 47 141 1.2 580 650 23 16.5 6 symbol r jc r ja min typ max 0.30 62 unit c/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energy turn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 47a @ 25c inductive switching v gs = 13v v dd = 380v i d = 47a @ 125c r g = 5 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 47a, r g = 5 inductive switching @ 125c v dd = 400v v gs = 15v i d = 47a, r g = 5 min typ max 6965 8355 2100 2940 85 127 250 375 30 45 105 157 18 36 28 56 295 442 84 168 810 1620 840 1680 1172 1758 985 1970 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 36.0mh, r g = 25 , peak i l = 10a 5 dv / dt numbers relect the limitations of the test circuit rather than the device itself. i s = - i d 47a , di / dt = 700a/s v r = v dss , t j = 150 c 6 eon includes diode reverse recovery. see igures 18, 20. 7 repetitve avalanche causes additional power losses that can be calculated as p av =e ar *f microsemi reserves the right to change, without notice, the speciications and information contained herein. characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 47a ) reverse recovery time (i s = - 47a , dl s /dt = 100a/s, v r = 350v) reverse recovery charge (i s = - 47a , dl s /dt = 100a/s, v r = 350v) peak diode recovery dv / dt 5 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : downloaded from: http:///
050-7202 rev c 6-2014 typical performance curves apt47n65b_sc3 r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 4.5v 5v 5.5v 4v v gs =15 & 10v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 3, transfer characteristics figure 4, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 5, maximum drain current vs case temperature figure 6, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 7, on-resistance vs. temperature figure 8, threshold voltage vs temperature 6v 6.5v 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 normalized to v gs = 10v @ 23.5a 120100 8060 40 20 0 5040 30 20 10 03 2.52.0 1.5 1.0 0.5 0 180160 140 120 100 8060 40 20 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 i d = 47a v gs = 10v downloaded from: http:///
050-7202 rev c 6-2014 apt47n65b_sc3 typical performance curves c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 9, maximum safe operating area figure 10, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 11, gate charges vs gate-to-source voltage figure 12, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 600 0 10 20 30 40 50 0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5 188100 5010 51 1612 84 0 t c =+25c t j =+150c single pulse 10ms 1ms 100s t j =+150c t j =+25c i d (a) i d (a) figure 13, delay times vs current figure 14, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 15, switching energy vs current figure 16, switching energy vs. gate resistance v dd = 400v r g = 5 t j = 125c l = 100 h e on e off t r t f switching energy (j) t d(on) and t d(off) (ns) switching energy (j) t r and t f (ns) 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 v dd = 400v i d = 47a t j = 125c l = 100 h e on includes diode reverse recovery. v ds = 300v v ds = 120v v ds = 480v i d = 47a t d(on) t d(off) e on e off 350300 250 200 150 100 50 0 25002000 1500 1000 500 0 v dd = 400v r g = 5 t j = 125c l = 100 h v dd = 400v r g = 5 t j = 125c l = 100 h e on includes diode reverse recovery. 30,00010,000 1,000 100 10 200100 10 1 operation here limited by r ds (on) 120100 8060 40 20 0 45004000 3500 3000 2500 2000 1500 1000 500 0 downloaded from: http:///
050-7202 rev c 6-2014 typical performance curves apt47n65b_sc3 to - 247 package outline i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 18, turn-on switching waveforms and deinitions figure 19, turn-off switching waveforms and deinitions t j = 125 c collector current collector voltage 5 % t r 90% 10% t d(on) 5% 10% gate voltage switching energy t t j = 125 c 90% gate voltage collector voltage collector current 0 10% 90% t f t d(off) switching energy drain current drain voltage drain current drain voltage i d v ds 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drai n drai n source gate 5.45 (.215) bsc 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) heat sink (drain)and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drai n (heat sink) 1.98 (.078) 2.08 (.082) gate drai n source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 1.016(.040) e3 100% sn plated d 3 pak (s) package outline downloaded from: http:///
050-7202 rev c 6-2014 apt47n65b_sc3 typical performance curves disclaimer: the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted , distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply. this document and the information cont ained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, tra de secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expre ssly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in wri ting signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or impl ied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer's inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsem i. it is the customers and users re - sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such informat ion is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/te rms-a-conditions. downloaded from: http:///
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